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Unusual Growth of InP Nanowires Grown on Silicon Surfaces

I. Kimukin, C.D. Johns, C.W. Edgar, M.S. Islam, Sungsoo Yi
2006 2006 Sixth IEEE Conference on Nanotechnology  

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Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on (111)-oriented Si surfaces by chemical vapor deposition catalyzed by Au particles. Unusually fast growth of both catalyzed and un-catalyzed InP nanowires was observed. Understanding the unusual growth of these nanowires would enable us to solve the issues faced in the growth of III-V compound semiconductor on a Si surface.
doi:10.1109/nano.2006.247730 fatcat:hbficg47mnd2nedqv6pzicfphe
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I. Kimukin, C.D. Johns, C.W. Edgar, M.S. Islam, Sungsoo Yi. "Unusual Growth of InP Nanowires Grown on Silicon Surfaces." 2006 Sixth IEEE Conference on Nanotechnology (2006)