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Silicon Rich Oxide with controlled mean size of silicon nanocrystals by deposition in multilayers

E. Quiroga, W. Bensch, M. Aceves, Z. Yu, J. P. Savy, M. Haeckel, A. Lechner
2009 2009 10th International Conference on Ultimate Integration of Silicon  

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The size of Si nanocrystals in Silicon Rich Oxide has been varied by depositing this material in multilayer arrays. They are possible candidates for one dimensional quantum devices. A study based on TEM, Raman and XRD measurements is presented.
doi:10.1109/ulis.2009.4897607 fatcat:f6l3nthuc5fj7hyt5cdtx567ve
Citation

E. Quiroga, W. Bensch, M. Aceves, Z. Yu, J. P. Savy, M. Haeckel, A. Lechner. "Silicon Rich Oxide with controlled mean size of silicon nanocrystals by deposition in multilayers." 2009 10th International Conference on Ultimate Integration of Silicon (2009)