A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is application/pdf
.
Variation of band bending at the surface of Mg-doped InGaN: Evidence ofp-type conductivity across the composition range
2007
Physical Review B
The variation of band bending as a function of composition at oxidized ͑0001͒ surfaces of Mg-doped In x Ga 1−x N is investigated using x-ray photoelectron spectroscopy. Distinctly different trends in barrier height are seen for the Mg-doped compared to undoped alloys, which is explained in terms of Fermi-level pinning at the surface and virtual gap states. Solutions of Poisson's equation within the modified Thomas-Fermi approximation are used to model the band bending and corresponding
doi:10.1103/physrevb.75.115312
fatcat:njzxhgtqe5hhpltd67rg2ywngq