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The near-field response of optically excited semiconductor quantum dots is theoretically investigated for the collection and illumination mode of a scanning near-field optical microscope. The study includes resolution, spectral line shape, and field distributions of single and interacting dots. It is shown that in contrast to near-field excitation of molecules with large dipole moments, the line shape and position of typical semiconductor quantum dots can be determined without a disturbance ifdoi:10.1103/physrevb.55.13715 fatcat:r2c3zdda2veghcuyfrix42omia