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Poly-Si thin film transistors (TFTs) exhibit large OFF-state reverse leakage currents since their channel conduction is controlled by the gate-induced grain barrier lowering (GIGBL). This also leads to the presence of the pseudosubthreshold region in the transfer characteristic. In this paper, we report a novel poly-Si multiple-gate TFT (MG-TFT), where the front gate consists of three sections with two different materials, in order to reduce the OFF-state leakage current with no significantdoi:10.1109/tdmr.2005.860558 fatcat:4yms6obwvbfeddwncbhuu2amrq