ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

M. Łukasiewicz, A. Wójcik-Głodowska, E. Guziewicz, R. Jakieła, T. Krajewski, E. Łusakowska, W. Paszkowicz, R. Minikayev, M. Kiecana, M. Sawicki, M. Godlewski, Ł. Wachnicki (+1 others)
2008 Acta Physica Polonica. A  
In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T s = 160 • C) with a new zinc precursor (dimethylzinc -DMZn) and with cobalt (II) acetyloacetonate (Co(acac)2) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
doi:10.12693/aphyspola.114.1235 fatcat:n6rfhm7gmfghhg7ydiprdulfwm