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Electrical Characterization And Study of Current Drift Phenomena And Hysteresis Mechanism In Junctionless Ion-Sensitive Field-Effect Transistor
[post]
2021
unpublished
A comprehensive study of the drain current drift mechanism and hysteresis phenomena in fabricated p-channel junctionless ion-sensitive field-effect transistor (JL-ISFET) has been investigated for the first time. The drift measurements have been performed through transient analysis of drain current, under different pH and liquid-gate bias (Vlg). Further, time-dependent gate-capacitance (CG) has also been analyzed to see the effect of hydroxyl ions (OH-) in the sensing film (Al2O3). The
doi:10.21203/rs.3.rs-618078/v1
fatcat:7ef5sztrerdl5ptneqrrkwgl2a