A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf.
The Sensing Performance of Undoped-AlGaN/GaN/Sapphire HEMT Hydrogen Gas Sensor
2008
2008 Second Asia International Conference on Modelling & Simulation (AMS)
Preserved Fulltext
The hydrogen sensing characteristics of undoped-AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are
doi:10.1109/ams.2008.184
dblp:conf/asiams/MohamadMH08
fatcat:hqhxb52r5ncsjore6zg7ndcmzu