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Growth of Metamorphic InGaP for Wide-Bandgap Photovoltaic Junction by MBE
Materials Research Society Symposium Proceedings
Metamorphic triple-junction solar cells can currently attain efficiencies as high as 41.1%. Using additional junctions could lead to efficiencies above 50%, but require the development of a wide bandgap (2.0-2.2eV) material to act as the top layer. In this work we demonstrate wide bandgap In y Ga 1-y P grown on GaAs x P 1-x via solid source molecular beam epitaxy. Unoptimized tensile GaAs x P 1-x buffers grown on GaAs exhibit asymmetric strain relaxation, along with formation of faceteddoi:10.1557/proc-1268-ee06-04 fatcat:ktehwo64rndobjn7z6lqrk2bfe