Transformation of Nanostructured Voids in the Crystallized GeS2-Ga2S3-CsCl Glasses

H. Klym, A. Ingram, I. Karbovnyk, O. Shpotyuk
2018 Proceedings of X International Scientific and Practical Conference "Electronics and Information Technologies"  
Transformation of voids in crystallized (80GeS 2 -20Ga 2 S 3 ) 100-х (СsCl) x , x = 0; 5; 10; 15 chalcogenide glasses was studied by positron annihilation lifetime spectroscopy. The CsCl content in GeS 2 -Ga 2 S 3 glassy matrix changed the defect-related component in positron lifetime spectra and confirmed the structural void agglomeration in comparison with the base glass. A larger amount of CsCl in (80GeS 2 -20Ga 2 S 3 ) 85 (СsCl) 15 glass resulted in void fragmentation due to loosening of the structure.
doi:10.30970/elit2018.b02 fatcat:sx5utfe4jjgxhg2yskr2cws7yi