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Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching
2018
International Letters of Chemistry, Physics and Astronomy
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In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns
doi:10.56431/p-ild1c1
fatcat:yhkn2f5e65bshdl3elerriezce