Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching

Hasan A Hadi
2018 International Letters of Chemistry, Physics and Astronomy  
In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns
more » ... ow that one diffraction peak for all PSL through anodization duration and it is assigned to the (400) plane and data confirmed the porous silicon PS was nanocrystalline.
doi:10.56431/p-ild1c1 fatcat:yhkn2f5e65bshdl3elerriezce