The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

Albena Paskaleva, Boris Hudec, Peter Jancovic, Karol Fröhlich, Dencho Spassov
2014 Facta universitatis - series Electronics and Energetics  
Resistive switching (RS) effects in Pt/HfO 2 /TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms
more » ... of different energy needed to dissociate O ions in structures with different TiN electrode treatment.
doi:10.2298/fuee1404621p fatcat:yulhdyqeorddndvwhjhdka7wlu