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The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures
2014
Facta universitatis - series Electronics and Energetics
Preserved Fulltext
Resistive switching (RS) effects in Pt/HfO 2 /TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms
doi:10.2298/fuee1404621p
fatcat:yulhdyqeorddndvwhjhdka7wlu