Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten

Do-Heyoung Kim, Young Jae Kim, Yo Soon Song, Byung-Teak Lee, Jin Hyeok Kim, Seigi Suh, Roy Gordon
2003 Journal of the Electrochemical Society  
Tungsten carbide (WC x ) thin films were prepared by plasma-assisted atomic layer deposition ͑ALD͒ using bis͑tert-butylimido͒bis͑dimethylamido͒tungsten at 250°C. The effects of plasma pulse time, radio frequency power, and the N 2 /H 2 ratio on the film properties, such as resistivity, surface roughness, step coverage, and stability in air, were examined. The film growth rate ͑thickness/cycle͒ was in the range 0.04-0.07 nm/cycle and the resistivity of the films varied from 295 to 22,000 ⍀ cm,
more » ... pending on the plasma conditions. The films were smooth and the conformality of the films deposited in 0.15 m holes with an aspect ratio of 15:1 was 100%.
doi:10.1149/1.1610000 fatcat:puqy5ljq25d3hpyw4wwd6vfnti