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Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
2003
Journal of the Electrochemical Society
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Tungsten carbide (WC x ) thin films were prepared by plasma-assisted atomic layer deposition ͑ALD͒ using bis͑tert-butylimido͒bis͑dimethylamido͒tungsten at 250°C. The effects of plasma pulse time, radio frequency power, and the N 2 /H 2 ratio on the film properties, such as resistivity, surface roughness, step coverage, and stability in air, were examined. The film growth rate ͑thickness/cycle͒ was in the range 0.04-0.07 nm/cycle and the resistivity of the films varied from 295 to 22,000 ⍀ cm,
doi:10.1149/1.1610000
fatcat:puqy5ljq25d3hpyw4wwd6vfnti