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Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing effects
2012
Journal of Applied Physics
Preserved Fulltext
To cite this version: Alain-Bruno Fadjie-Djomkam, Soraya Ababou-Girard, Christian Godet. Barrier height distribution and dipolar relaxation in metal-insulator-semiconductor junctions with molecular insulator: Ageing Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging Appl. Phys. Lett. 101, 211606 (2012) A computational study of graphene silicon contact
doi:10.1063/1.4767121
fatcat:ua2s2xgytrf2deczdicitd2in4