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Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect
2007
Novel In-Plane Semiconductor Lasers VI
The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors,
doi:10.1117/12.699524
fatcat:5k7zifv7dnemvfpbzts4hg4e5i