Interfacial mechanism in the anomalous Hall effect of Co/Bi2O3 bilayers

Edurne Sagasta, Juan Borge, Luis Esteban, Yasutomo Omori, Martin Gradhand, YoshiChika Otani, Luis E. Hueso, Fèlix Casanova
2019 Physical review B  
General rights This document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this Rapid Communication, the contribution of the Bi 2 O 3 interface to the anomalous Hall effect (AHE) of Co is experimentally studied in Co/Bi 2 O 3 bilayers. We evidence a variation of ∼40% in the
more » ... AHE of Co when a Bi 2 O 3 capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi 2 O 3 bilayers that originates from the Co/Bi 2 O 3 interface and contributes to the skew scattering.
doi:10.1103/physrevb.100.100407 fatcat:cxlzw6kdufdslmbuv7anv4b2yi