The Internet Archive has a preservation copy of this work in our general collections.
The file type is application/pdf
.
The properties of amorphous GaN
[article]
2011
arXiv
pre-print
In this paper, we present three amorphous GaN models obtained from the first principles simulation. We find that a chemically ordered continuous random network is the ideal structure for a-GaN. If we exclude the tail states, we predict a 3.0eV optical gap for 64-atom model and 2.3eV for 250-atom models. We observe a highly localized valence tail and a remarkably delocalized exponential conduction tail which we associate with different hybridization in the two tails. Based upon these results, we
arXiv:1103.1634v1
fatcat:pxded53fbrectoclcmqvn3lyze