Highly transparent and conducting SnO2•ESb2O5 films were prepared by a Dip-Coating method The preparative conditions and electrical properties of the thin films were examined. The thin film was formed on the quartz glass substrate by dipping into the corresponding solution and calcinating at 600•Ž in O2 gas. The conductivities of thin films were measured as a function of doped Sb contents. As a result, the thin film has a conductivity of logƒÐ=+3(S/cm) and a transmission of ab out 80% in a visible light region.