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Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe
1997
Journal of Applied Physics
The intrinsic carrier concentrations, Fermi energies, and the electron effective masses are calculated for Hg 1 ._Zn_Te with 0<x_<0.4 and 50 K_<T_<400 K. The numerical calculations are based on the Kane k.p model and no further analytical simplification or approximation is made for the energy band structure beyond those inherent in the Kane model. The results are compared to the previous calculations.
doi:10.1063/1.364289
fatcat:z6fspfiisjggrlamds7jhylfry