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Ion implanted GaAs/InGaAs lateral injection ridge QW laser for OEICs: study of operation mechanisms
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors
We have fabricated and characterized lateral current injection (LCI) ridge-waveguide lasers with implanted contacts. Comprehensive optical and electrical measurements have been performed over a wide temperature range (10K to 300K) on two sets of lasers with differing ridge widths and active region structures. Several new phenomena unique to the LCI mechanism have been observed and explained, including a positive differential resistance kink at threshold, and an inverse temperature-dependence of
doi:10.1109/iscs.1998.711668
fatcat:mjshjbjtyfd3xn2tmy3vgup5lm