HF-Release of Sacrificial Layers in CMOS-integrated MOEMS structures

S Döring, M Friedrichs, W Pufe, M Schulze
2016 Journal of Physics, Conference Series  
In this paper we will present details of the release process of SiO 2 sacrificial layers we use within a multi-level MOEMS process developed by IPMS. Using such sacrificial layers gain a lot of benefits necessary for the production of high-end MOEMS devices like high surface quality and great surface planarity. However the HF-release of the sacrificial layer can be connected with specific issues. We present, which mechanisms are involved in the release process and how knowing them, can be the
more » ... them, can be the key for an optimized performance of the device. More-over we will present how to protect the CMOS backplane of our devices from unwanted HF attack during the release.
doi:10.1088/1742-6596/757/1/012004 fatcat:qp6ue5zpqvck5likjsvdmda4jq