Tailoring magnetoresistance at the atomic level: Anab initiostudy

Kun Tao, V. S. Stepanyuk, I. Rungger, S. Sanvito
2012 Physical Review B  
The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be
more » ... e TMR can also be tuned by an external voltage.
doi:10.1103/physrevb.85.045406 fatcat:ll32f3tgujhtxlmkogs5c7on2i