Fabrication mechanisms of thin oxide films have been investigated by using the excimer laser induced metalorganic vapor deposition (Laser-MOCVD) method without heating substrates. TiO2 and PbO films are successfully obtained on (100) Si substrates from their parent metalorganics, Ti(O-iC3H7)4 and (C2H5)3PbOCH2C(CH3)3 , respectively. A ZrO2 film is notf ormed from Zr(O-tC4H9)4. The laser wavelength and irradiation angle dependence measurements indicate that film formation proceeds via light

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... ption of the metalorganic species adsorbed on the substrates. The existence of one-photon process in the TiO2 film formation is assured by laser fluence dependence measurements . The maximum growth rate, 0.05 A per laser pulse, of TiO2 film obtained in the experiments is compared with a rough estimation by a surface reaction model. The model can essentially explain the slow growth rate from the small absorption cross section of the metalorganics and the mild fluence of laser irradiation .