In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed ͑RTA͒ InP p ϩ -n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy ͑DLTS͒ and capacitance-voltage transient technique ͑CVTT͒. Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which ͑at 0.6,

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... 0.425, and 0.2 eV below the conduction band͒ result from RTA, while the origin of the other three levels ͑at 0.46, 0.25, and 0.27 eV below the conduction band͒ can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels.