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Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
2005
Applied Physics Letters
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We fabricated GaAs/ AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs ͑111͒B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/ AlGaAs core-shell structures. Microphotoluminescence measurements of
doi:10.1063/1.2035332
fatcat:ccyjfpp4i5eifhn3cpumhmc65e