Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects

Ant Ural, P. B. Griffin, J. D. Plummer
1999 Physical Review Letters  
Self-diffusion measurements in silicon are extended to the range 800 -900 ± C by monitoring 30 Si diffusion in isotopically enriched structures. Comparing P, Sb, and self-diffusion under nonequilibrium conditions, we determine that the interstitial-mediated fraction of self-diffusion is confined between 0.50 and 0.62 in the temperature range of 800 -1100 ± C. This allows activation enthalpies of 4.68 and 4.86 eV to be determined for the interstitial and vacancy mechanisms, respectively. Both
more » ... hanisms are also found to exhibit large activation entropies. This result is in contrast to values extracted from metal diffusion experiments.
doi:10.1103/physrevlett.83.3454 fatcat:b3sqkgig3zha3i5aflc3uwlbj4