A study of the evolution of wave function penetration effects on ballistic drain current in nanoscale double gate (DG) metal-oxide semiconductor field-effecttransistors (MOSFET) with the down-scaling of device dimensions is presented. The electrostatics of the devices is calculated through the self-consistent solution of two dimensional Schrödinger and Poisson equations. It is observed that wave function penetration increases drain current in DG MOSFETs fabricated on (110) silicon and the

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... ate current is more sensitive to the penetration effect than the on-state current. Numerical results show that the magnitude of the relative increase in I D due to wave function penetration increases sharply with the down-scaling of silicon body thickness. On the other hand, the impact of the down-scaling of gate length on the penetration effects depends on the gate bias. The relative increase in the off-state current due to wave function penetration decreases with the scaling of the gate length, while the variation of the relative increase in the on-state current with the gate length is insignificant. Drain induced barrier lowering plays an important role in determining the effects of wave function penetration on the ballistic drain current with device scaling. With the simultaneous scaling of the body thickness and the gate length, the effects of wave function penetration in both off-and on-state currents increase. Physical explanation for these observations are provided. 2