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In this contribution, an experimental setup to investigate the defect luminescence between 0.72 -0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a µm-scale.doi:10.4236/mr.2014.21002 fatcat:ma7yxgxstrhnzeyus3saq3otii