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Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

James Griffiths, Siyuan Zhang, J Lhuillier, Dandan Zhu, WY Fu, A Howkins, I Boyd, D Stowe, David Wallis, Colin Humphreys, Rachel Oliver, Apollo-University Of Cambridge Repository (+1 others)
2016

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Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating
more » ... age and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.
doi:10.17863/cam.6825 fatcat:nnvdaao26jbxfkmj3svlsozbf4
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James Griffiths, Siyuan Zhang, J Lhuillier, Dandan Zhu, WY Fu, A Howkins, I Boyd, D Stowe, David Wallis, Colin Humphreys, Rachel Oliver, Apollo-University Of Cambridge Repository, Apollo-University Of Cambridge Repository. "Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold." (2016)