In range of 10.6 μm IR radiation an analysis of noncooled (T = 300 K) (PC) photodiodes and (EMCD) magnetoexlusion detectors with (Hg,Cd)Te was made. The basic detection parameters of these devices are limited by the noise resulting from statistical processes of thermal generation and carrier recombination. The parameter evaluation of related photodiodes demonstrates that the optimal parameters such as: thickness or structure doping on the substrate with a widened energy gap differs each other

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... r structures with ohmic contacts at both ends. In the paper, for photodiodes and magnetoexclusion detectors with (Hg,Cd)Te the research results : optimal photosensitive detection parameters are presented for the room temperature (T=300 K) and acceptable large as well as small (5 and 0.5 W / mm2) densities of the dissipated power.