Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

G. Pozina, C. Hemmingsson, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, B. Monemar, L. Hultman, E. Janzén
2008 Journal of Applied Physics  
high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition have been studied by temperature dependent time-resolved photoluminescence. The AlGaN-related emission is found to be sensitive to the excitation power and to the built-in internal electric field. In addition, this emission shows a shift to higher energy with the reduction in the excitation density, which is rather unusual. Using a self-consistent calculation of the band potential profile, we
more » ... ial profile, we suggest a recombination mechanism for the AlGaN-related emission involving electrons confined in the triangular AlGaN quantum well and holes weakly localized due to potential fluctuations.
doi:10.1063/1.3028687 fatcat:5usnqxwkpfbqlpxawx2oqyeldq