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Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation
2005
Applied Physics Letters
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Articles you may be interested in Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer Appl. Phys. Lett. 97, 031917 (2010); 10.1063/1.3467455 Effect of temperature on layer separation by plasma hydrogenation Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications
doi:10.1063/1.2032602
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