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Self-consistent calculations for shallow defects in semiconductors: II. Donor-acceptor pairs
1975
Journal of Physics C Solid State Physics
A general method has been developed for performing self-consistent calculations for shallow defects or defect complexes in semiconductors. Results are given here for donoracceptor pairs in GaP and a comaprison is made of the various treatments of central-cell corrections and the effects arising from the overlap of the donor and acceptor wavefunctions. Whilst no detailed refitting of host parameters is attempted, it seems likely that the current estimate of the bandgap (2.339 eV) is too large,
doi:10.1088/0022-3719/8/8/014
fatcat:uzdlttdpmvcbzpc2csyeufycoy