Optically engineered ultrafast pulses for controlled rotations of exciton qubits in semiconductor quantum dots J. Appl. Phys. 112, 014313 (2012) Hot electron extraction from CdTe quantum dots via beta carotene molecular energy levels Appl. Phys. Lett. 100, 261110 (2012) Effect of proton bombardment on InAs dots and wetting layer in laser structures Appl. Phys. Lett. 100, 261105 (2012) Enhancement of the Purcell effect for colloidal CdSe/ZnS quantum dots coupled to silver nanowires by a metallic

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... tip Appl. The control of the emission energy from self-assembled InAs quantum dots has been demonstrated by using indium flush. The low-temperature indium-flush method was found to control the emission energy preserving the high structural uniformity attributed to the slow dot growth. In the standard indium-flush method, where the substrate temperature was raised up from the dot-growth temperature, blueshift larger than the shift by the low-temperature indium flush was observed and was explained reasonably by the enhanced In/Ga-interdiffusion. Also, the effect of AlGaAs capping layer before the indium-flush step was studied.