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A Highly Reliable Logic NVM "eCFlash (Embedded CMOS Flash)" Utilizing Differential Sense-Latch Cell with Charge-Trapping Storage
2008
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design
A new Logic NVM "eCFlash (embedded CMOS Flash)" has been developed without any additional process steps in a 0.25um technology. In this architecture, a novel differential sense-latch cell with charge-trapping storage is adopted. This unique cell structure functions as a differential sense amplifier as well as a data latch, therefore mass data can be restored to each cell's latch simultaneously for static data output with high sensitivity and low power consumption. Furthermore the handling
doi:10.1109/nvsmw.2008.29
fatcat:ufqgnjk6frgtdn2xh7y3yzacc4