Transport-based dopant metrology in advanced FinFETs

Gabriel P. Lansbergen, Rajib Rahman, Cameron J. Wellard, Jaap Caro, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Lloyd C.L. Hollenberg, Sven Rogge
2008 2008 IEEE International Electron Devices Meeting  
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. Through correlation of experimental data with multimillion atom simulations in NEMO 3-D, we can identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO 2 interface. The ability to model the excited states rather than just the ground states is the critical need. We therefore demonstrate a new approach
more » ... rate a new approach to atomistic impurity metrology and confirm the assumption of tunneling through individual impurity quantum states.
doi:10.1109/iedm.2008.4796794 fatcat:sz5makcjgnfrjdwuy3lyet4ira