Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, M. Inuishi
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)  
The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitom An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness
more » ... below 4nm. A unified parameter set, $b=3.3eV and mc'/m,=0.41, is obtained after the extraction of various samples.
doi:10.1109/sispad.2000.871257 fatcat:4t4tydfpbradrge53tqarsalcu