A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is application/pdf
.
Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors
2018
2018 IEEE/MTT-S International Microwave Symposium - IMS
In this paper, we propose a non-quasi-static large-signal model to capture the high-frequency dispersion exhibited by laterally diffused metal-oxide semiconductor (LDMOS) devices. We show that industry-standard nonlinear large-signal models for LDMOS based on quasi-static assumptions are not sufficient for high-efficiency designs at frequencies higher than 2 GHz. This dispersive behavior results from the combination of high-frequency operation and the lengthened drain extension region that is
doi:10.1109/mwsym.2018.8439238
fatcat:hptgu5frwfhnpoqq4phxdqntne