The paper presents results of the new developed approach to manufacturing of original topology using photographic masks that allows to perform a real-time estimation of photolithographic significance of the pattern defects on a mask being detected while controlling the correspondence of the photographic masks to the required topology. In this case such operation as projection transfer of an image from the photographic mask to wafer has not been applied. The given approach excludes not only

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... e but topology group defects as well and also optical proximity correction structure defects.