Dynamics of Hot Electrons in ZnSe-ZnTe Double Barrier Heterostructures

P. Bała
1997 Acta Physica Polonica. A  
In this paper we perform a detailed study of the transport of hot electrons in the double barrier heterostructures with the presence of a collector barrier. This system is considered as a double barrier resonant tunneling device. The electron is described by time-dependent Schrődinger equation, which allows ns to study detailed dynamics of the carriers. The influence of an energy step in the collector area of the device on the tunneling probability is investigated. The significant role of
more » ... icant role of dissipation due to electron-phonon interactions is presented. PACS numbers: 03.65.-w, 73.40.Gk, 73.61.-r Resonant tunneling has been the topic of great interest in recent years and has been intensively studied using simple electronic devices such as double barrier resonant tunneling heterostructures (DBRT). The DBRT structures are also used as a source of the hot electrons injected to the rest of the device and can be implemented into electronic devices such as resonant-tunneling hot electron transistors (RHETs) [1, 2] . The growing number of practical applications increases interest in investigation of the electron dynamics in such devices [3, 4] . The improvement of the technology of device fabrication and measurement techniques allows nowadays for investigation of different aspects of carrier trańsport in a wide range of the double barrier structures. Available experimental data show well-interpreted resonant tunneling peaks in I-V characteristics. However, additional peaks can also be observed [5, 6] . The interpretation of most of the observed data is well established based on resonant tunneling as the most important transport process, but the exact nature of the additional peaks is not clear. One of the possible explanation is a sequential energy loss of electron's kinetic energy due to the phonon emission [5] . The sequential energy loss is possible while the ballistic electron interacts strongly with the phonon bath. Another approach stresses the role of quantum interference effects in the collector region of device [6] . This approach stresses the role of the additional energy barriers present in the system at the collector side of the device. Because of the difficulty in obtaining direct experimental evidence which can confirm or eliminate presented explanations, a consistent theoretical treatment can provide additional information. In the relaxation process, as well as in interference of the electron wave function on the potential step, the essential role is played by a relatively high (709)
doi:10.12693/aphyspola.92.709 fatcat:woo66gwwrfc2pah5uvorzmwene