This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with

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... hanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.