Tin (Sn) doped silicon dioxide (SiO 2 ) thin films, for use in optical electronic devices, were prepared by the sputtering deposition method using two kinds of mixed powder targets. One of them was a metal mixed powder target of Sn and SiO 2 , and the others was a metal-oxide powder target of SnO 2 and SiO 2 . Experimental results suggest that Sn doped SiO 2 thin films can be prepared by the method using both powder targets. The properties of processing plasma, such as electron density and

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... rature, emission species, and the elements concentration ratio of the prepared films can be controlled by the ratio of the SnO 2 and SiO 2 powder target mixture using a SnO 2 + SiO 2 target. However, it is hard to control the processing plasma and elements concentration ratio of the prepared films using a Sn + SiO 2 target.