Preparation of Sn doped SiO2 thin films by magnetron sputtering deposition using metal and metal-oxide powder targets

Hiroharu Kawasaki, Tamiko Ohshima, Yoshihito Yagyu, Takeshi Ihara, Masanori Shinohara, Yoshiaki Suda
2018 Japanese Journal of Applied Physics  
Tin (Sn) doped silicon dioxide (SiO 2 ) thin films, for use in optical electronic devices, were prepared by the sputtering deposition method using two kinds of mixed powder targets. One of them was a metal mixed powder target of Sn and SiO 2 , and the others was a metal-oxide powder target of SnO 2 and SiO 2 . Experimental results suggest that Sn doped SiO 2 thin films can be prepared by the method using both powder targets. The properties of processing plasma, such as electron density and
more » ... rature, emission species, and the elements concentration ratio of the prepared films can be controlled by the ratio of the SnO 2 and SiO 2 powder target mixture using a SnO 2 + SiO 2 target. However, it is hard to control the processing plasma and elements concentration ratio of the prepared films using a Sn + SiO 2 target.
doi:10.7567/1347-4065/aaea67 fatcat:oikejnm6nvfadizz26y2tnpcfa