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Parametric manufacturing yield modeling of GaAs/AlGaAs multiple quantum well avalanche photodiodes
1999
IEEE transactions on semiconductor manufacturing
GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APD's) are of interest as an ultra-low noise image capture mechanism for high-definition systems. Since literally millions of these devices must be fabricated for imaging arrays, it is critical to evaluate potential performance variations of individual devices in light of the realities of semiconductor manufacturing. Specifically, even in a defect-free manufacturing environment, random variations in the fabrication process will lead
doi:10.1109/66.762882
fatcat:v3kvgcwx6nfbhanpzsqsyd7qvy