摘要 在低真空的 CVD 系统中直接热蒸发 SiO 粉末并以金为催化剂在硅衬底上制备出大量长达几十微米的硅 纳米线(SiNWs), 通过 X 射线衍射谱(XRD)、场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、选区电子 衍射仪(SAED)和 Raman 光谱等技术对硅纳米线进行形貌及结构分析. 实验结果表明, 在不同生长温度下制备得 到的硅纳米线质量不同, 其中在 700 益温区生长的硅线质量最好; 与晶体硅 Raman 的一级散射特征峰(TO)520.3 cm -1 相比, 纳米硅线的 Raman 特征峰(TO)红移至 514.8cm -1 . 关键词: SiO鄄Au 法, 硅纳米线(SiNWs), 制备 中图分类号: O649 SiliconNanowiresProducedbySiO鄄AuMethod PAN,Guo鄄Wei 鄢 Abstract Large鄄scalesiliconnanowires(SiNWs),whichconsistofacrystallinesiliconcoreandathickoxideshell

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... fmicrometers,weresynthesizedbyevaporationofsiliconmonoxide(SiO)usingagold鄄coated siliconwaferassubstrateinalowvacuumCVDsystem.Themorphologyandstructureofthenanowireswereinspected andanalyzedbyX鄄raydiffraction(XRD),field鄄emissionscanningelectronmicroscopy(FESEM),transmissionelectron microscopy(TEM),selectedelectrondiffraction(SAED),andRamanspectroscopy.Theexperimentalresultsindicated thequalityofsiliconnanowires(SiNWs)variedwithdifferentgrowthtemperatures,anditwasfoundthattheSiNWs producedat700 益 zonehadawell鄄crystallizedstructure.ComparedwiththeRamanpeakofthefirst鄄ordertransverse opticalphononmode(TO)at520.3cm -1 forbulksilicon,thecorrespondingpeakforas鄄grownSiNWsredshiftedto514.8 cm -1 .