In this present work we report the growth of Cd 0.9 Zn 0.1 Te doped with In by a modified THM technique. It has been demonstrated that by controlling the microscopically flat growth interface, the size distribution and concentration can be drastically reduced in the as-grown ingots. This results in as-grown detector-grade CZT by the THM technique. The three-dimensional size distribution and concentrations of Te inclusions/precipitations were studied. The size distributions of the Te

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... ns/inclusions were observed to be below the 10-µm range with the total concentration less than 10 5 cm -3 . The relatively low value of Te inclusions/precipitations results in excellent charge transport properties of our as-grown samples. The (µτ) e values for different as-grown samples varied between 6-20 x10 -3 cm 2 /V. The as-grown samples also showed fairly good detector response with resolution of ~1.5%, 2.7% and about 3.8% at 662 keV for quasi-hemispherical geometry for detector volumes of 0.18 cm 3 , 1 cm 3 and 4.2 cm 3 , respectively.