2-inch Ge-N codoped and Ge doped SiC single crystals were grown by physical vapor transport (PVT) method. And the SiC ingots were fabricated into 10 mm10 mm SiC wafers for characterization. Semiconductor technology was used to fabricate Ti/Pt/Au metal contact on the carbide-terminated face of SiC wafers. Subsequently, all samples were characterized by secondary ion mass spectrometry (SIMS) and Hall measurements. The SIMS results showed that Ge-N codoping method could enhance the Ge doping

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... ntration in SiC crystals effectively, which could achieve 1.1910 19 /cm 3 . According to Hall measurement, ohmic contact could be obtained when samples were