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Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
2010
Japanese Journal of Applied Physics
A field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) was fabricated. Investigations on the linearity characteristics were performed through two-tone and wide band code division multiple access (WCDMA) modulated excitations. The FP-HEMT exhibited an improved breakdown voltage of 160 V compared with that of the conventional HEMT. Additionally, a higher output power of 25.4 dBm with 43% power added efficiency at a 30 V drain bias at 2 GHz was achieved. When biased at 30 V and 15
doi:10.1143/jjap.49.014103
fatcat:cpa33a5tana7pljlqay5bixwke