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Contact gating at GHz frequency in graphene
[article]
2018
arXiv
pre-print
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the
arXiv:1804.10883v1
fatcat:z3lyarl7mfculfcde6j4ws25im