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Diamond films grown by Bias-Controlled Hot Filament Chemical Vapor Deposition (BCCVD) on silicon (Si) substrates were characterized by Transmission Electron Microscopy (TEM). Both plan-view and cross-sectional TEM samples were made from diamond films grown under different biasing conditions. It was found that defect densities in the films were substantially reduced under zero and reverse bias (substrate negative relative to the filament) as compared to forward bias. Furthermore, the diamond/Sidoi:10.1557/jmr.1990.2367 fatcat:76z4gfmpdbbefnepthlb5wiram