In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors (FETs). In this new approach, we are using the cellulosefiber-based paper in an "interstrate" structure since the device is built on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (> 30 cm 2 /Vs), drain-source current

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... ff modulation ratio of approximately 10 4 , near-zero threshold voltage, enhancement n-type operation, and subthreshold gate voltage swing of 0.8 V/decade. The cellulose-fiber-based paper FETs' characteristics have been measured in air ambient conditions and present good stability, after two months of being processed. The obtained results outpace those of amorphous Si thin-film transistors (TFTs) and rival with the same oxide-based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and lowcost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID, and point-of-care systems for self-analysis in bioapplications, among others. Index Terms-Cellulose fibers, oxide field-effect transistor (FET), RF magnetron sputtering, thin films.